| PART |
Description |
Maker |
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| ML9XX15 |
InGaAsP DFB-LD with EA modulator
|
Mitsubishi Electric Corporation
|
| KLT-255544 |
1550nm InGaAsP strained MQW DFB-LD
|
KODENSHI KOREA CORP.
|
| ML99212 ML9XX12 |
InGaAsP - MQW - DFB LASER DIODES
InGaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Corporation
|
| ML925J22F-06 ML9XX16 ML920J11S ML920J11S-04 ML920J |
InGaAsP DFB LASER DIODES InGaAsP的DFB激光器
|
Mitsubishi Electric Sem...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Semicon...
|
| ML9XX17 ML9XX17SERIES |
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML792E32 |
(ML7xx32) 10Gbps InGaAsP DFB LASER DIODE
|
Mitsubishi Electric
|
| NX8510UD NX8510UD-AZ |
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS
|
California Eastern Laboratories
|
| NX6508-AZ NX6508 |
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
CEL[California Eastern Labs]
|
